Events at Physics |
In the second part I will describe a theory of spin-dependent scattering in the two-dimensional electron gas of silicon transistors. The scattering of conduction electrons off neutral donor impurities depends sensitively on the relative orientation of their spin states, and the six-fold degeneracy of the silicon conduction band leads to a strongly oscillatory coupling of conduction electrons to donors placed at varying depths in the transistor channel. This coupling can be gate controlled, enabling optimization for single donor spin readout and spatially resolved characterization of the conduction electron spin polarization that does not rely on weak spin-orbit coupling effects or interface scattering.