Abstract: Quantum device losses are predominantly from surfaces and interfaces. Atomic layer deposition (ALD) enables tuneable low loss materials, such as superconducting nitrides with engineered crystallinity. Isotropic and anisotropic ALE are two distinct techniques which can each prepare and repair surfaces by removing native oxides prior to deposition or removing subsurface damage from RIE-induced subsurface amorphization and etchant incorporation. Isotropic ALE and ALD can also be combined in-situ to engineer interfaces prior to deposition and modify films. This talk will introduce these techniques through the lens of potential use cases in superconducting, photonic, and color center quantum device fabrication.